| PART |
Description |
Maker |
| 1MBI600PX-120 |
IGBT MODULE 800 A, 1200 V, N-CHANNEL IGBT
|
Fuji Electric Holdings Co., Ltd.
|
| PM800HSA06 PM800HSA060 |
Intellimod?/a> Module Half Phase IGBT Inverter Output (800 Amperes/600 Volts)
Intellimod⑩ Module Half Phase IGBT Inverter Output (800 Amperes/600 Volts)
Intellimod Module Half Phase IGBT Inverter Output (800 Amperes/600 Volts)
|
POWEREX[Powerex Power Semiconductors]
|
| QRS1450001 |
Fast Recovery Diode Module (500 Amps/1400 Volts) 250 A, 1400 V, SILICON, RECTIFIER DIODE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| IXGK28N140B3H1 |
60 A, 1400 V, N-CHANNEL IGBT, TO-264AA TO-264, 3 PIN
|
Infineon Technologies AG
|
| 1014-6A |
1000-1400 MHz, 28V, Class C, Common Base; fO (MHz): 1400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 28; Cob (pF): 3.5; Case Style: 55LV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
|
Microsemi, Corp.
Microsemi Corporation
|
| BSM25GD100 BSM25GD100D C67076-A2501-A2 |
IGBT MODULE 25 A, 1000 V, N-CHANNEL IGBT
IGBT MODULE IGBT模块
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| VWO40-14IO7 |
29 A, 1400 V, SCR MODULE-12
|
IXYS, Corp.
|
| MCK500-14IO1 MDC500-14IO1 |
1294 A, 1400 V, SCR MODULE-7
1294 A, 1400 V, SCR MODULE-5
|
IXYS, Corp.
|
| MG400J2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
From old datasheet system
|
Toshiba Semiconductor
|
| QRS1460T30 |
Fast Recovery Diode Module (600 Amp/1400 Volts)
|
POWEREX[Powerex Power Semiconductors]
|
| TT425N TD425N10KOF-A TD425N12KOF TT425N14KOF |
Netz-Thyristor-Modul Phase Control Thyristor Module
800 A, 1000 V, SCR
800 A, 1200 V, SCR
|
eupec GmbH
List of Unclassifed Manufacturers
|
| BUK856-800A127 |
24 A, 800 V, N-CHANNEL IGBT, TO-220AB
|
NXP SEMICONDUCTORS
|
